Methods and apparatus for providing an interposer for interconnecting semiconductor chips

ABSTRACT

Methods and apparatus are provide for an interposer for interconnecting one or more semiconductor chips with an organic substrate in a semiconductor package, the interposer including: a first glass substrate having first and second opposing major surfaces, the first glass substrate having a first coefficient of thermal expansion (CTE1); a second glass substrate having first and second opposing major surfaces, the second glass substrate having a second coefficient of thermal expansion (CTE2); and an interface disposed between the first and second glass substrates and joining the second major surface of the first glass substrate to the first major surface of the second glass substrate, where CTE1 is less than CTE2, the first major surface of the first glass substrate operates to engage the one or more semiconductor chips, and the second major surface of the second glass substrate operates to engage the organic substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of priority under U.S.C. §119 ofU.S. Provisional Application Ser. No. 61/934,366 filed on Jan. 31, 2014the content of which is relied upon and incorporated herein by referencein its entirety.

BACKGROUND

The present disclosure relates to methods and apparatus for providing aninterposer for interconnecting semiconductor chips.

Semiconductor packaging technologies have evolved in significant waysover the years. Early on, the approach to package higher complexitysemiconductor circuits (and therefore achieving higher functionality andperformance in a given package) was to increase the size of asemiconductor chip in two dimensions within the package. As a practicalmatter, one cannot expand laterally in two dimensions without boundbecause eventually the design will suffer in terms of power and signalrouting complexities, power dissipation problems, performance problems,manufacturing yield problems, etc. In addition, at present there arepractical limitations preventing the manufacture of two differentsemiconductor fabrication processes on a common semiconductor wafer,which also limits the circuit design options available to an artisan.

The above problems associated with expanding a semiconductor chip in twodimensions has led artisans to explore ways of expanding in threedimensions; namely, by expanding vertically. Earlier approaches tovertical expansion of semiconductor chips included chip stacking, suchas placing memory chips one atop the other within a single package.While this certainly yielded higher chip density over a single chippackage (given a fixed lateral area) there are disadvantages andpractical limitations with chip stacking, including power andperformance issues, manufacturing yield problems and the like. Anotherconventional approach to vertical expansion in semiconductor packagingincluded so-called package-on-package techniques, where a number ofseparate ball grid array packages are assembled one atop the other (in astacked arrangement), with a standard interface to route signals betweenthem. The package on package technique also results in higher chipdensity, although there are inefficiencies with employing separatepackages for each semiconductor chip.

Still further approaches to vertical expansion in semiconductorpackaging include so-called 2.5-D and 3-D integration, whereby a siliconinterposer is employed to interconnect two or more semiconductor chipswithin a single package. The primary function of the interposer is toprovide interconnectivity in such a way that the two or moresemiconductor chips may employ high terminal pitch and avoid the needfor vias through the semiconductor chips themselves. The techniqueinvolves flipping the semiconductor chips over from their usualconfiguration and orienting the chip substrates up and chip-sides down.The chips are provided with micro-bump terminals (at high pitch), whichare connected to corresponding terminals on a top side of the siliconinterposer. The opposite, bottom side of the silicon interposer isconnected to the package substrate (which is typically organic) by wayof suitable terminals, usually Controlled Collapse Chip Connection (C4)joints. The interposer is provided with through silicon vias (TSVs) sothat electrical connections may be made from the terminals of thesemiconductor ships on the top side of the silicon interposer to theterminals of the package substrate at the bottom side of the siliconinterposer. Notably, such a configuration permits the 2.5-D integrationof the separate semiconductor chips without requiring TSVs on the activedie of the semiconductor chips, which avoids significant complications.The 3-D integration may involve at least one semiconductor chip havingTSVs in order to vertically and directly connect two semiconductor chipstogether and then to connect the combination to the silicon interposerfor connection with other semiconductor ships.

While the silicon interposer is a promising and useful technology toachieve vertical integration of semiconductor chips, the conventionalinterposer technology is not without problems, particularly in terms ofmismatches in coefficients of thermal expansion (CTEs) through thestack, including CTE match-up between the silicon interposer and theorganic package substrate. Undesirable CTE mismatches may result infailures in the interconnections between the semiconductor chips and thesilicon interposer and/or failures in the interconnections between thesilicon interposer and the package substrate.

Accordingly, there are needs in the art for new methods and apparatusfor providing interposers for interconnecting semiconductor chips.

SUMMARY

It has been discovered that significant advantages in the verticalintegration of semiconductor chips may be achieved by employing aninterposer formed from glass, whereby the designer is provided withmechanisms for achieving degrees of design freedom in the elasticmodulus and CTE of the interposer. These freedoms in design may be usedto engineer the interposer in a way that reduces CTE mismatches andincreases the reliability and durability of the overall package.

In accordance with one or more aspects of the embodiments herein,methods and apparatus provide for an interposer for interconnecting oneor more semiconductor chips with an organic substrate in a semiconductorpackage. The interposer may include a first glass substrate having firstand second opposing major surfaces, the first glass substrate having afirst coefficient of thermal expansion (CTE1); a second glass substratehaving first and second opposing major surfaces, the second glasssubstrate having a second coefficient of thermal expansion (CTE2); andan interface disposed between the first and second glass substrates andjoining the second major surface of the first glass substrate to thefirst major surface of the second glass substrate. By way of example,CTE1 may be less than CTE2, where the first major surface of the firstglass substrate operates to engage the one or more semiconductor chips,and the second major surface of the second glass substrate operates toengage the organic substrate.

The interface may be formed from one or more of an adhesive material(such as a UV curable epoxy), an oxide bond (such as a silicon-oxidebond), and an intermediate glass material having a melting temperaturesignificantly lower than melting temperatures of the first and secondglass substrates.

In one or more alternative embodiments, the interposer may furtherinclude a third glass substrate having first and second opposing majorsurfaces, the third glass substrate having a third coefficient ofthermal expansion (CTE3), wherein the second and third glass substratesare fused such that the second major surface of the second glasssubstrate is connected to the first major surface of the third glasssubstrate.

Assuming that the first major surface of the first glass substrate isadapted to engage the one or more semiconductor chips, and the secondmajor surface of the third glass substrate is adapted to engage theorganic substrate, then the respective CTEs may adhere to the followingrelationship: CTE1 is less than CTE2, and CTE3 is less than CTE2.Alternatively, the respective CTEs may adhere to the followingrelationship: CTE1 is less than CTE2, and CTE2 is less than CTE3.

Other aspects, features, and advantages will be apparent to one skilledin the art from the description herein taken in conjunction with theaccompanying drawings.

DESCRIPTION OF THE DRAWINGS

For the purposes of illustration, one or more embodiments are shown inthe drawings, it being understood, however, that the embodimentsdisclosed and described herein are not limited to the precisearrangements and instrumentalities shown.

FIG. 1 shows a vertically integrated structure, which schematicallyillustrates certain features of 2.5-D integration, and includes aninterposer having novel features;

FIG. 2 shows a vertically integrated structure, which schematicallyillustrates certain features of 3-D integration, and includes aninterposer having novel features; and

FIGS. 3-7 show respective examples of multi-layer interposers that maybe used to implement the embodiments herein.

DETAILED DESCRIPTION

Various embodiments disclosed herein are directed to methods andapparatus for providing an interposer formed from glass forinterconnecting one or more semiconductor chips with an organicsubstrate in a semiconductor package.

With reference to FIG. 1, a vertically integrated structure 100 isshown, which schematically illustrates certain features of 2.5-Dintegration, albeit with a novel features not heretofore found in theprior art. In particular, the structure 100 includes a plurality ofsemiconductor chips 10-1, 10-2, which are coupled via connectivemechanisms 30-1, 30-2, 30-3 to an organic package substrate 20 throughan interposer 102. The structure 100 may further include a housing 40providing a suitable level of encapsulation of the elements within. Asis known in the art, the structure 100 may be connected to a printedcircuit board (PCB, not shown) by connecting the package substrate 10 tothe PCB via a connective mechanism 30-4. Among the contemplatedimplementations of the connective mechanisms 30-1, 30-2, 30-3, 30-4 is aball grid array employing solder joints technology, although other knowelectrical interconnection techniques may be employed, such asthrough-hole techniques, other surface mount techniques, chip carriertechniques, pin grid arrays, etc.

The semiconductor chips 10-1, 10-2 may comprise memory circuitry, logiccircuitry, micro-processing circuitry, digital circuitry, analogcircuitry, etc., as is known in the art. In the illustrated example, thesemiconductor chips 10-1, 10-2 are disposed laterally with respect toone another on a first major surface 104 of the interposer 102. Therespective connective mechanisms 30-1, 30-2 provide interconnectivityfrom the respective semiconductor chips 10-1, 10-2 to the interposer102. Although some elements are not shown for purposes of brevity andclarity, the interposer 102 may include multiple layers of metal traces,vias 50-1, decoupling capacitors, and other elements in order tofacilitate the electrical interconnections between the connectivemechanisms 30-1, 30-2 of the respective semiconductor chips 10-1, 10-2and the package substrate 20. A second, opposing major surface 106 ofthe interposer 102 is coupled to the package substrate 20 by way of theconnective mechanism 30-3. Among other elements, the vias 50-1 throughthe interposer 102 facilitate electrical interconnectivity from theconnective mechanisms 30-1, 30-2 and the connective mechanism 30-3. Aswill be discussed in further detail later in this description, theparticular material(s) and implementation of the interposer 102 is ofimportance.

The package substrate 20 may also include one or more metal layers, vias50-2, etc. to complete the interconnectivity from the connectivemechanism 30-3 of the interposer 102 to the printed circuit board. Thepackage substrate 20 may be formed from an organic material, such ascommonly available epoxy-based materials, resin-based materials, and thelike.

FIG. 2 shows an alternative vertically integrated structure 100-1, whichincludes certain features of 3-D integration, albeit again with certainnovel features of the interposer 102. In this example, the respectivesemiconductor chips 10-1, 10-2 are disposed one atop the other, with oneof the two chips being connected to the first major surface 104 of theinterposer 102. An optional further semiconductor chip 10-3 may bedisposed beneath the interposer 102 and may be electrically connected tosuitable terminals on the second major surface 106 of the interposer102.

In a broad aspect, the interposer 102 is formed from a specificmaterial—not the conventional silicon material—but rather a heretoforeunderutilized material; namely, glass. For example, the interposer mayinclude quartz, glass, glass-ceramic, oxide glass, ion exchanged glass,other types of glass, and combinations thereof. Suitable glass or glassceramic materials may include suitable glass compositions, such as sodalime glass (SiO₂, Na₂O, CaO, etc.), metallic alloy glasses, ionic meltglass, etc. In some applications, the interposer 102 may include a veryhigh strength glass, formed from conventional glass that is enhanced bychemical strengthening (ion exchange), such as Corning Gorilla® Glassavailable from Corning Incorporated. Such glass may be formed fromalkali aluminosilicate glass or alkali aluminoborosilicate glass.

There are notable characteristics of glass that have been considered inchoosing the material to implement the interposer 102. Thesecharacteristics include: (1) low loss tangent (e.g., of about 0.0058 @ 5GHz), (2) good dielectric constant (e.g., of about 5.1 @ 1-10 GHz), (3)high surface resistivity (e.g., of about 1×e17 Ohm/sq), (4) goodchemical resistance, (5) good dielectric breakdown strength, (6) largerange of available thicknesses, (7) good homogeneity and isotropicity,(8) proven track record in industry applications, (9) capable ofincorporating precision blind holes and precision through holes, (10)high dimensional stability, (11) high surface cleanliness, (12) highlycost effective material and highly available, and (13) does notcontribute to conductive anodic filament (CAF) failures.

In addition to the above characteristics, it has been discovered thatsignificant advantages in the vertical integration of semiconductorchips 10 may be achieved when the interposer 102 is formed from glass.Specifically, the designer is provided with mechanisms for achievingdegrees of design freedom in at least the CTE of the interposer 102,which may be used to engineer the element in a way that reduces CTEmismatches and increases the reliability and durability of the overallpackage 100. This flexibility is highly advantageous in the context ofthe embodiments disclosed herein because the problem of CTE mismatch ina vertically integrated package is not insignificant. Indeed, the CTE ofthe semiconductor chips (e.g., silicon chips) 10-1, 10-2, 10-3 is on theorder of 2-3 ppm/° C., while the CTE of the organic package substrate 20is on the order of about 15-20 ppm/° C. On the one hand, when the CTE ofthe interposer 102 is closer to that of the semiconductor chips 10-1,10-2, 10-3, then the connective mechanism 30-3, between the interposer102 and the package substrate 20 may be at risk of undue stress andpremature failure. On the other hand, when the CTE of the interposer 102is closer to that of the organic package substrate 20, then theintegrity of the connective mechanisms 30-1, 30-2 as between thesemiconductor chips 10-1, 10-2 and the interposer 102 may be at risk offailure.

In accordance with embodiments herein, however, the glass interposer 102exhibits characteristics that address the CTE matching issues at bothlevels of the stack, thereby increasing the reliability of the overallstructure 100. With reference to FIGS. 3-7, the embodiments of theinterposer 102 employ at least two layers of glass material, each layerwith a potentially different CTE and/or thickness, in a laminatedstructure, yielding a composite interposer 102 with improved performancecharacteristics. In particular the composite interposer 102 may providea gradation in the CTE through the interposer 102, which results inbuffering strain between the semiconductor chips 10-1, 10-2 and theorganic package substrate 20, which reduces CTE mismatch issues andincreases reliability and assembly yields of the structure 100.

With reference to FIG. 3, an embodiment of the interposer 102-1includes: a first glass substrate 110-1, a second glass substrate 110-2,and an interface 112-1 disposed between the first and second glasssubstrates 110-1, 110-2. The first glass substrate 110-1 has first andsecond opposing major surfaces 114-1, 114-2, and the second glasssubstrate 110-2 also has first and second opposing major surfaces 116-1,116-2. The interface 112-1 is disposed between the first and secondglass substrates 110-1, 110-2 in such a way that the second majorsurface 114-2 of the first glass substrate 110-1 is joined to the firstmajor surface 116-1 of the second glass substrate 110-2. Although onlytwo layers 110-1, 110-2 are illustrated in this embodiment, it should beunderstood that alternative embodiments may be obtained by addingfurther layers 110 through additional interfaces 112.

In the case of the embodiment of FIG. 3, the interface 112-1 may beformed from a compliant adhesive material, such as a UV curableadhesive, a UV curable epoxy, curable based adhesives, and the like.With respect to manufacturing considerations, the thickness of theadhesive interface 112-1 should be as thin as possible, such as on theorder of 10-20 microns. Once the layers 110-1, 110-2 are interconnectedvia the interface 112-1, then through holes may be introduced using anyof the known methodologies, such as laser or CNC drilling, or laserdamage and etch (LDE).

Further features of the interposer 102-1 of FIG. 3 include that thefirst glass substrate 110-1 has a first coefficient of thermal expansion(CTE1), the second glass substrate 110-2 has a second coefficient ofthermal expansion (CTE2), and the CTE1 is different from CTE2. Forexample, when the first major surface 114-1 of the first glass substrate110-1 operates to engage the one or more semiconductor chips 10-1, 10-2,and the second major surface 116-2 of the second glass substrate 110-2operates to engage the organic package substrate 102, then CTE1 is lessthan CTE2. For example, one or more embodiments may adhere to thefollowing relationship: 1≦CTE1 ppm/° C.≦10 and 5≦CTE2 ppm/° C.≦15.Additionally or alternatively, one or more embodiments may adhere to thefollowing relationship: 3≦CTE1 ppm/° C.≦5 and 8≦CTE2 ppm/° C.≦10.

With reference to FIG. 4, an alternative embodiment of an interposer102-2 may employ some of the same elements of the interposer 102-1 ofFIG. 3, such as the first glass substrate 110-1, and the second glasssubstrate 110-2. The embodiment of FIG. 4, however, employs a differentinterface 112-2, namely, an oxide bond, such as a silicon-oxide bond.The interface 112-2, despite being different in kind from the interface112-1, nevertheless is disposed between the first and second glasssubstrates 110-1, 110-2 in such a way that the second major surface114-2 of the first glass substrate 110-1 is joined to the first majorsurface 116-1 of the second glass substrate 110-2 (where certain of thereference identifiers of the surfaces being omitted for clarity).

The interposer 102-2 of FIG. 4 may also include similar features as theinterposer 102-1 in terms of the CTE1 and CTE2 characteristics of thefirst glass substrate 110-1 and the second glass substrate 110-2,respectively.

In terms of manufacturing the interposer 102-2, the respective first andsecond glass substrates 110-1, 110-2 are cleaned and may be joined usinga suitable oxide promoting process, such as application of temperature(e.g., room temperature) and pressure (e.g. relatively high pressure).Chemical bonds are thereby initiated between silicon and oxygen.Thereafter, this structure is heated to a higher temperature, such asabout 400° C. or higher to remove any hydroxyl bonds. The resultantsilicon-oxygen bond, which is the backbone of most glass structures,eliminates the need for a separate adhesive component. Once the layers110-1, 110-2 are interconnected via the interface 112-2, then throughholes may be introduced using any of the know methodologies, such aslaser or CNC drilling, or laser damage and etch (LDE).

With reference to FIG. 5, a further alternative embodiment of aninterposer 102-3 may employ some of the same elements of the otherinterposers 102-1 and 102-2. For example, the interposer 102-3 may againemploy the first glass substrate 110-1, and the second glass substrate110-2. The embodiment of FIG. 5, however, employs yet a differentinterface 112-3, namely, an intermediate glass material, such as glassmaterial having a melting temperature significantly lower than meltingtemperatures of the first and second glass substrates 110-1, 110-2.Similar to the other embodiments, the interface 112-3 is disposedbetween the first and second glass substrates 110-1, 110-2 in such a waythat the second major surface 114-2 of the first glass substrate 110-1is joined to the first major surface 116-1 of the second glass substrate110-2 (again, certain of the reference identifiers of the surfaces beingomitted for clarity).

The interposer 102-3 of FIG. 5 may also include similar features as theother interposers 102-1, 102-2 in terms of the CTE1 and CTE2characteristics of the first glass substrate 110-1 and the second glasssubstrate 110-2, respectively.

In terms of manufacturing the interposer 102-3, the respective first andsecond glass substrates 110-1, 110-2 are cleaned and positioned with theintermediate glass material of the interface 112-3 therebetween. Next,the intermediate glass material is heated to a sufficient degree to meltin at least some portions thereof. By way of example, a laser may beemployed to melt the intermediate glass material, thereby joining thefirst and second glass substrates 110-1, 110-2 together. Once again,after the layers 110-1, 110-2 are interconnected via the interface112-3, then through holes may be introduced using any of the knowmethodologies, such as laser or CNC drilling.

With reference to FIGS. 6 and 7, and as noted above, alternativeembodiments may be obtained by adding at least one further layer 110-3through an additional interface 112-4. In the embodiments of FIGS. 6 and7, the respective interposers 102-4 and 102-5 each employ three glasslayers: a first glass substrate 110-1 having first and second opposingmajor surfaces, a second glass substrate 110-2 having first and secondopposing major surfaces, and a third glass substrate having first andsecond opposing major surfaces. The first and second glass substrates110-1, 110-2 are fused such that the second major surface of the firstglass substrate 110-1 is connected to the first major surface of thesecond glass substrate 110-2. The fusion may be accomplished using anyof the techniques disclosed or suggested herein, such as one or more ofthe interfaces 112. The second and third glass substrates 110-2, 110-3are also fused such that the second major surface of the second glasssubstrate 102-2 is connected to the first major surface of the thirdglass substrate 102-3. Again, the fusion as between the second and thirdglass substrates 110-2, 110-3 may be accomplished using any of thetechniques disclosed or suggested herein, such as one or more of theinterfaces 112.

The first glass substrate 110-1 has a first coefficient of thermalexpansion (CTE1), the second glass substrate 110-2 has a secondcoefficient of thermal expansion (CTE2), and the third glass substrate110-3 has a third coefficient of thermal expansion (CTE3). At least twoof CTE1, CTE2, and CTE3 are different, and alternatively all of the CTEsmay be different. In order to provide concrete examples, it is assumedthat each of the interposers 102-4 and 102-5 are employed in thefollowing configuration: the first major surface (the upper surface asshown) of the first glass substrate 110-1 is adapted to engage the oneor more semiconductor chips 10-1, 10-2, and the second major surface(the lower surface as shown) of the third glass substrate 110-3 isadapted to engage the organic package substrate 20.

As to the specific embodiment illustrated in FIG. 6, in one adaptation,CTE1 may be less than CTE2, and CTE3 may be less than CTE2. Statedanother way, the CTE2 of the middle, second glass substrate 110-2 may behighest as compared to the other CTEs. For example, in one or moreembodiments, the CTEs may adhere to the following relationship: 1≦CTE1ppm/° C.≦10; 5≦CTE2 ppm/° C.≦15; and 1≦CTE3 ppm/° C.≦10. Alternatively,in one or more embodiments, the CTEs may adhere to the followingrelationship: 3≦CTE1 ppm/° C.≦5; 8≦CTE2 ppm/° C.≦10; and 3≦CTE3 ppm/°C.≦5.

As to the specific embodiment illustrated in FIG. 7, in one adaptation,CTE1 may be less than CTE2, and CTE2 may be less than CTE3. Statedanother way, there may be a stepwise, but increasing change in the CTEfrom the first glass substrate 110-1, to the second glass substrate110-2, to the third glass substrate 110-3. For example, in one or moreembodiments, the CTEs may adhere to the following relationship: 1≦CTE1ppm/° C.≦10; 3≦CTE2 ppm/° C.≦12; and 5≦CTE3 ppm/° C.≦15. Alternatively,in one or more embodiments, the CTEs may adhere to the followingrelationship: 3≦CTE1 ppm/° C.≦5; 5≦CTE2 ppm/° C.≦8; and 8≦CTE3 ppm/°C.≦10.

As is implied (but not required) by the illustrations of FIGS. 3-7, therespective thicknesses of the first, second, and third glass substrates110 may be the same or may differ to one degree or another. In mostcases, thicknesses of the glass substrates 110 will fall into somerange. For example, contemplated thickness ranges include between about50 um and 700 um. In is noted, however, that the thicknesses of each ofthe layers 110 in a two layered or three layered structure disclosedherein may be adjusted such that the total thickness requirement is metand at the same time, the warpage of the interposer is minimized. If adesign goal is primarily to reduce the warpage of the multi-layeredstructure, then one can adjust both thickness and CTEs to achieve theminimal warpage. A notable objective is getting a close CTE matchbetween the semiconductor chip and the first layer of glass and a closeCTE match between the organic substrate and the second layer of theglass.

Although the disclosure herein has been described with reference toparticular embodiments, it is to be understood that these embodimentsare merely illustrative of the principles and applications of theembodiments herein. It is therefore to be understood that numerousmodifications may be made to the illustrative embodiments and that otherarrangements may be devised without departing from the spirit and scopeof the present application.

The invention claimed is:
 1. An interposer for interconnecting one ormore semiconductor chips with an organic substrate in a semiconductorpackage, the interposer comprising: a first glass substrate having firstand second opposing major surfaces, the first glass substrate having afirst coefficient of thermal expansion (CTE1); a second glass substratehaving first and second opposing major surfaces, the second glasssubstrate having a second coefficient of thermal expansion (CTE2); andan interface disposed between the first and second glass substrates andjoining the second major surface of the first glass substrate to thefirst major surface of the second glass substrate, wherein the interfaceis formed from an intermediate glass material having a meltingtemperature lower than melting temperatures of the first and secondglass substrates, CTE1 is less than CTE2, the first major surface of thefirst glass substrate operates to engage the one or more semiconductorchips, and the second major surface of the second glass substrateoperates to engage the organic substrate.
 2. The interposer of claim 1,wherein 1≦CTE1 ppm/° C.≦10 and 5≦CTE2 ppm/° C.≦15.
 3. The interposer ofclaim 1, wherein 3≦CTE1 ppm/° C.≦5 and 8≦CTE2 ppm/° C.≦10.
 4. Aninterposer for interconnecting one or more semiconductor chips with anorganic substrate in a semiconductor package, the interposer comprising:a first glass substrate having first and second opposing major surfaces,the first glass substrate having a first coefficient of thermalexpansion (CTE1); a second glass substrate having first and secondopposing major surfaces, the second glass substrate having a secondcoefficient of thermal expansion (CTE2); a third glass substrate havingfirst and second opposing major surfaces, the third glass substratehaving a third coefficient of thermal expansion (CTE3); a firstintermediate glass material disposed between the second major surface ofthe first glass substrate and the first major surface of the secondglass substrate, the first intermediate glass material having a meltingtemperature lower than melting temperatures of the first and secondglass substrates; a second intermediate glass material disposed betweenthe second major surface of the second glass substrate and the firstmajor surface of the third glass substrate, the second intermediateglass material having a melting temperature lower than meltingtemperatures of the first and second glass substrates, wherein: thefirst and second glass substrates are fused by the first intermediateglass material such that the second major surface of the first glasssubstrate is connected to the first major surface of the second glasssubstrate, the second and third glass substrates are fused by the secondintermediate glass material such that the second major surface of thesecond glass substrate is connected to the first major surface of thethird glass substrate, and the first major surface of the first glasssubstrate is adapted to engage the one or more semiconductor chips, andthe second major surface of the third glass substrate is adapted toengage the organic substrate.
 5. The interposer of claim 4, wherein CTE1is less than CTE2, and CTE3 is less than CTE2.
 6. The interposer ofclaim 5, wherein 1≦CTE1 ppm/° C.≦10; 5≦CTE2 ppm/° C.≦15; and 1≦CTE3ppm/° C.≦10.
 7. The interposer of claim 5, wherein 3≦CTE1 ppm/° C.≦5;8≦CTE2 ppm/° C.≦10; and 3≦CTE3 ppm/° C.≦5.
 8. The interposer of claim 4,wherein CTE1 is less than CTE2, and CTE2 is less than CTE3.
 9. Theinterposer of claim 8, wherein 1≦CTE1 ppm/° C.≦10; 3≦CTE2 ppm/° C.≦12;and 5≦CTE3 ppm/° C.≦15.
 10. The interposer of claim 8, wherein 3≦CTE1ppm/° C.≦5; 5≦CTE2 ppm/° C.≦8; and 8≦CTE3 ppm/° C.≦10.
 11. A method ofproducing a semiconductor package, comprising: providing at least onesemiconductor chip; providing an organic substrate; and disposing aninterposer between the semiconductor chip and the organic substrate,wherein: the interposer includes: (i) a first glass substrate havingfirst and second opposing major surfaces, the first glass substratehaving a first coefficient of thermal expansion (CTE1); (ii) a secondglass substrate having first and second opposing major surfaces, thesecond glass substrate having a second coefficient of thermal expansion(CTE2); and (iii), an intermediate glass material having a meltingtemperature lower than melting temperatures of the first and secondglass substrates, the intermediate glass material being disposed betweenthe second surface of the first glass substrate and the first surface ofthe second glass substrate; and applying a laser to the intermediateglass material to melt the intermediate glass material, thereby fusingthe first glass substrate and the second glass substrates such that thesecond major surface of the first glass substrate is connected to thefirst major surface of the second glass substrate, wherein: CTE1 is lessthan CTE2, the first major surface of the first glass substrate directlyor indirectly engages the at least one semiconductor chip, and thesecond major surface of the second glass substrate directly orindirectly engages the organic substrate.
 12. The method of claim 11,wherein one of: 1≦CTE1 ppm/° C.≦10 and 5≦CTE2 ppm/° C.≦15; and 3≦CTE1ppm/° C.≦5 and 8≦CTE2 ppm/° C.≦10.
 13. The method of claim 11, wherein:the interposer further comprises a third glass substrate having firstand second opposing major surfaces, the third glass substrate having athird coefficient of thermal expansion (CTE3), the interposer furthercomprises a second intermediate glass material having a meltingtemperature lower than melting temperatures of the first and secondglass substrates, the second intermediate glass material being disposedbetween the second major surface of the second glass substrate and thefirst major surface of the third glass substrate, the method furthercomprises applying the laser to the second intermediate glass materialto melt the intermediate glass material, thereby fusing the first glasssubstrate and the second glass substrates such that the second majorsurface of the second glass substrate is connected to the first majorsurface of the third glass substrate, the first major surface of thefirst glass substrate directly or indirectly engages the at least onesemiconductor chip, and the second major surface of the third glasssubstrate directly or indirectly engages the organic substrate.
 14. Themethod of claim 13, wherein CTE1 is less than CTE2, and CTE3 is lessthan CTE2.
 15. The method of claim 14, wherein one of: 1≦CTE1 ppm/°C.≦10; 5≦CTE2 ppm/° C.≦15; and 1≦CTE3 ppm/° C.≦10; and 3≦CTE1 ppm/°C.≦5; 8≦CTE2 ppm/° C.≦10; and 3≦CTE3 ppm/° C.≦5.
 16. The method of claim13, wherein CTE1 is less than CTE2, and CTE2 is less than CTE3.
 17. Themethod of claim 16, wherein at least one of: 1≦CTE1 ppm/° C.≦10; 3≦CTE2ppm/° C.≦12; and 5≦CTE3 ppm/° C.≦15; and 3≦CTE1 ppm/° C.≦5; 5≦CTE2 ppm/°C.≦8; and 8≦CTE3 ppm/° C.≦10.